The effects of the substrate biasVBSon the parameters of random telegraph signals (RTSs) in submicrometer siliconp‐channel metal–oxide–semiconductor transistors are analyzed. The fractional RTS amplitude increases slightly for more positiveVBS, suggesting a close connection with the capture cross section of the corresponding near‐interface oxide trap. A strong exponential dependence of the capture time constant on the drain currentIDis observed, which can be explained by the transverse‐field dependence of the hole capture cross section. The emission time constant on the other shows only a weak dependence onVBS, orID. Finally, the corresponding low‐frequency noise peaks at constant frequencyfare studied in detail; excellent agreement is observed between the theoretical Lorentzian spectrum and the experimental peaks. ©1995 American Institute of Physics.