Devices which use titanium polycide to replace polysilicon in a silicon‐gate process have been processed and evaluated. The circuit used was designed for standardN‐channel Si‐gate processing, and was a standard production part. Working devices were obtained and life tested. Electrical characteristics of polycide wafers were compared with electrical characteristics of devices made from the same mask set using polysilicon interconnects. The titanium polycide wafers successfully completed life testing (1000 h of dynamic life testing at 125 °C) showing no degradation.