Formation of aluminum‐silicon (Al‐Si) alloy/titanium nitride (TiN) layered structures and their electromigration (EM) performance have been investigated. The crystallographic structure of the TiN film changes with the sputter‐deposition conditions. A large negative substrate bias in reactive sputtering induces a structural transition in the TiN film. The crystal orientation normal to the film surface is easily controlled from the ⟨111⟩ to the ⟨200⟩ direction. The crystallographic orientation of the Al‐Si alloy film has been successfully controlled by the film deposition on an orientation controlled barrier TiN film. The Al‐Si alloy film grows epitaxially on TiN at the initial stage of deposition and this causes the Al‐Si alloy’s preferred orientation to the underlying TiN film. These layered structures with different levels of Al‐Si alloy preferred orientation have been subjected to EM tests, and the Al‐Si alloy film with stronger ⟨111⟩ orientation was found to have a longer EM lifetime. The best EM resistance has been obtained on Al‐Si alloy film with the strongest ⟨111⟩ orientation, which is achieved on a TiN film formed by the nitridation of a titanium (Ti) film. Thus, highly reliable interconnects can be obtained by improving the preferred orientation of Al‐Si alloy film using texture improved TiN film. ©1995 American Institute of Physics.