Improvement of crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs by heat treatment
作者:
Shintaro Miyazawa,
Takashi Honda,
Yasunobu Ishii,
Satoru Ishida,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 4
页码: 410-412
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94792
出版商: AIP
数据来源: AIP
摘要:
Crystal homogeneities in liquid‐encapsulated Czochralski grown, semi‐insulating GaAs (100) wafers were evidently improved by annealing at 800 °C for more than 12 h. The improvement was confirmed by observing cathodoluminescence intensity line scanning profile and by measuring field‐effect transistor (FET) threshold voltage standard deviation &sgr;Vth. &sgr;Vthfor 14‐h and 18‐h annealed/polished wafers exhibited about one‐half that for a nonannealed wafer. Direct evidence of the improvement was also obtained by measuring dislocation effect on FET threshold voltage.
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