Low to moderately boron‐doped silicon crystals were irradiated at room temperature with a 2.0‐MeV electron beam and studied by means of deep‐level transient spectroscopy. New dominant hole trapsH(0.12) andH(0.07) located, respectively, at 0.12 and 0.07 eV above the valence band, and an electron trapE(0.59) located at 0.59 eV below the conduction band are reported. The statesH(0.12), produced directly after irradiation, andH(0.07), formed following 400 °C annealing, are observed in samples of low boron contents (∼1014cm−3). The stateE(0.59), on the other hand, is observed after 400 °C annealing in the moderately boron‐doped samples (∼1015cm−3). Based on the thermal stability and energy position of these states tentative defect identifications are proposed by correlation with published data. Other previously reported hole traps are observed at 0.22 and 0.34 eV above the valence band and are ascribed to the divacancyV2(0/+) and the carbon interstitial‐carbon substitutional pair, respectively.