We present a self‐consistent calculation of the electronic structure ofp‐type delta‐doped quantum wells in GaAs. We examine the dependence of the energy levels, Fermi level and the depth of the well with impurity concentration. We show that in this system the Fermi level is very close to the valence band; the heavy‐hole subbands, as expected, contain many more states than the light‐hole ones. Our results agree quite well with the experimental results available for this system. ©1996 American Institute of Physics.