Pd based and conventional TiPtAu contacts were realized on GaSb grown by molecular beam epitaxy. Forp‐type GaSb, an undoped sample with an acceptor background concentration of 6.6×1016cm−3and forn‐type GaSb tellurium‐doped samples with donor concentrations of 7.9×1017and 1.2×1018cm−3were used. Circular transmission line patterns were defined on the samples for determining the specific contact resistivity. Onn‐type GaSb, the metallizations consisted of palladium and one of the dopants germanium or sulphur. Rapid thermal annealing lead to values of 4×10−5Ω cm2. Onp‐type GaSb, nonalloyed TiPtAu and alloyed PdGePd contacts were deposited. Values as low as 5.6×10−6Ω cm2could be obtained. The interfaces of the TiPtAu, the PdGePd, and PdSPd contacts were studied by high resolution cross‐sectional transmission microscopy.