A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMS
作者:
R. N. Thomas,
M. H. Francombe,
期刊:
Applied Physics Letters
(AIP Available online 1967)
卷期:
Volume 11,
issue 3
页码: 108-110
ISSN:0003-6951
年代: 1967
DOI:10.1063/1.1755039
出版商: AIP
数据来源: AIP
摘要:
An in‐situ low‐energy electron diffraction (LEED) study has been made of the homoepitaxial growth in ultrahigh vacuum of silicon films up to several microns thickness. During growth on (111) at temperatures between 600 and 1000°C the initial Si(111)‐7 surface structure of the substrate is retained by the epitaxial film. Below 600°C a mixed Si(111)‐7 and Si(111)‐5 structure develops in the initial stages of growth and for a given temperature, is preserved as epitaxy proceeds. At temperatures lower than 350°C the LEED data indicate that the film structure becomes amorphous. Epitaxy on (100) occurs at temperatures down to about 300°C. In this case the initial Si(100)‐2 surface structure is retained by the film except in the range 650 to 700°C, where a new ordered form of the Si(100)‐2 structure is generated.
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