We report measurements of gold circuits fabricated on four BaxSr1-xTiO3ferroelectric films doped with 1% Mn grown on MgO substrates by laser ablation. Low frequency (1 MHz) measurements of σTand tanδ on interdigital capacitors are compared with high frequency measurements of phase shift and insertion loss on coupled microstrip phase shifters patterned onto the same films. The variation in temperature of both high and low frequency device parameters is compared. Annealed with amorphous buffer layer and unannealed films are compared. Room temperature figures of merit of phase shift per insertion loss of up to 58.4°/dB at 18 GHz and 400 V dc bias were measured.