Arsenic precipitation from thin surface layers of low‐temperature grown GaAs
作者:
R. A. Kiehl,
M. Yamaguchi,
T. Ohshima,
M. Saito,
N. Yokoyama,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1441-1443
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117608
出版商: AIP
数据来源: AIP
摘要:
Arsenic precipitation from a thin, 100‐nm surface layer of GaAs grown at low temperature (LT) by molecular beam epitaxy is investigated. The precipitate depth distribution is examined for different rapid thermal annealing cycles. It is found that the precipitate distribution can tail a long distance into the underlying stoichiometric GaAs layer, depending on the peak annealing temperature. The distribution for an 800 °C anneal is virtually unaffected by a prior low temperature ‘‘soak’’ at 600 °C, thus showing that the precipitation is insensitive to the initial point defect concentrations in this temperature range. The relevance of these results to the precipitation process and to the use of thin LT layers in device applications is discussed. ©1996 American Institute of Physics.
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