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Generation of millimeter waves with a GaAs/AlAs superlattice oscillator

 

作者: E. Schomburg,   S. Brandl,   K. Hofbeck,   T. Blomeier,   J. Grenzer,   A. A. Ignatov,   K. F. Renk,   D. G. Pavel’ev,   Yu. Koschurinov,   V. Ustinov,   A. Zhukov,   A. Kovsch,   S. Ivanov,   P. S. Kop’ev,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 12  

页码: 1498-1500

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121038

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on a semiconductor superlattice oscillator for generation of millimeter waves (frequency 65 GHz). The main element of the oscillator is a doped short-period GaAs/AlAs superlattice with negative differential conductance. The oscillator is due to current oscillations caused by charge density domains. The oscillator delivered, at an efficiency of 0.2&percent; for the conversion of electrical power to radiation power, a power of 100 &mgr;W in a bandwidth of the order of 200 kHz. ©1998 American Institute of Physics.

 

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