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Micromachined silicon tunnel sensor for motion detection

 

作者: T. W. Kenny,   S. B. Waltman,   J. K. Reynolds,   W. J. Kaiser,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 58, issue 1  

页码: 100-102

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104432

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have used the extreme sensitivity of electron tunneling to variations in electrode separation to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.

 

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