Micromachined silicon tunnel sensor for motion detection
作者:
T. W. Kenny,
S. B. Waltman,
J. K. Reynolds,
W. J. Kaiser,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 1
页码: 100-102
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104432
出版商: AIP
数据来源: AIP
摘要:
We have used the extreme sensitivity of electron tunneling to variations in electrode separation to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals, including a folded cantilever spring and a tip. Measurements of displacement sensitivity and noise are reported. This device offers a substantial improvement over conventional technology for applications which require compact, highly sensitive transducers.
点击下载:
PDF
(452KB)
返 回