首页   按字顺浏览 期刊浏览 卷期浏览 A review of recombination mechanisms in semiconductors
A review of recombination mechanisms in semiconductors

 

作者: P.T.Landsberg,  

 

期刊: Proceedings of the IEE - Part B: Electronic and Communication Engineering  (IET Available online 1959)
卷期: Volume 106, issue 17S  

页码: 908-914

 

年代: 1959

 

DOI:10.1049/pi-b-2.1959.0169

 

出版商: IEE

 

数据来源: IET

 

摘要:

A survey of dominant recombination mechanisms in semiconductors is given in terms of elementary physical processes. A division between avoidable and unavoidable recombination mechanisms is convenient. In the former, group recombination through crystallographic defects and impurities, in the latter, group band-band Auger recombination, can be important. The evidence for the dominance of radiative recombination is rather limited.

 

点击下载:  PDF (1246KB)



返 回