Laser induced fluorescence is used to monitor CF radicals in both a 13.56 MHz CF4processing plasma and a pulsed dc discharge. The axial spatial variation of CF shows a drop near added silver and copper substrates, a local maximum at polymer surfaces, and a flat approach to aluminum, SiO2, and silicon. The same behavior was previously observed with CF2and it is argued that the CF profile reflects its formation by electron impact on CF2rather than its heterogeneous reactivity. As oxygen is added to a CF4discharge, [CF] drops off faster than [CF2]. The voltage dependence of the CF decay rate in a pulsed discharge suggests CF oxidation involves molecular rather than atomic oxygen.