Numerical and experimental studies of the sputter yield amplification effect
作者:
C. Nender,
I.V. Katardjiev,
J.P. Biersack,
S. Berg,
A.M. Barklund,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1994)
卷期:
Volume 130-131,
issue 1
页码: 281-291
ISSN:1042-0150
年代: 1994
DOI:10.1080/10420159408219790
出版商: Taylor & Francis Group
关键词: sputtering yield amplification;preferential sputtering;enhanced sputtering
数据来源: Taylor
摘要:
Recently we have demonstrated the existence of the so-called sputter yield amplification (SYA) effect, based on the preferential sputtering of the lighter species during ion bombardment of composite solids and resulting in enhanced partial sputtering yield of the lighter species as compared to the elemental sputtering yield. In specific cases the enhancement of the sputtering yield could reach one order of magnitude or more. This effect has been both numerically studied and experimentally observed during low energy ion bombardment of i) thin films of low mass on heavy substrates; ii) thin films of high mass on light substrates; iii) simultaneous high mass atom deposition on light substrates; iv) simultaneous low mass atom deposition on heavy substrates. In all cases sputter yield enhancement of the low mass species is observed but in each individual case different specific goals are achieved. For example, in case i) much faster etch rate of the thin film is achieved than what is expected from the elemental sputtering yield. In cases ii) and iii) faster erosion of the target is achieved in view of sputter-deposition processes. In case iv) a nearly complete removal of the deposited species with a partial sputtering yield substantially higher than the elemental sputtering yield is achieved in view of selective ion beam assisted deposition. The SYA effect is also observed in the net growth regime, i.e. during the deposition of composite films with ion co-bombardment. In this case the composition of the growing film differs from that of the deposition flux.
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