The apparatus and technique are described for the growth of large, strain‐free, single crystals of zinc of any desired orientation. It is shown that a gross mosaic structure may occur in the beginning of the growth of a crystal but may be eliminated by a steep temperature gradient. The data show the necessity of satisfying certain growth conditions, namely, that the ratio of the temperature gradient to the rate of growth must be near a certain favorable, but not necessarily the same, value for each orientation.