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Truly ohmic contacts in engineered Al/Si/InGaAs(001) diodes

 

作者: Silvano De Franceschi,   Fabio Beltram,   Claudio Marinelli,   Lucia Sorba,   Marco Lazzarino,   Bernhard H. Mu¨ller,   Alfonso Franciosi,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 16  

页码: 1996-1998

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121244

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the fabrication of nonalloyed ohmic contacts onn-InxGa1−xAs(0.25⩽x⩽0.38)grown by molecular beam epitaxy (MBE) on GaAs(001). This result is obtained by suppression of the native Al/InGaAs Schottky barrier by means of the MBE growth of Si bilayers at the metal-semiconductor interface. Truly ohmic contacts are demonstrated by x-ray photoemission spectroscopy and current-voltage techniques. ©1998 American Institute of Physics.

 

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