首页   按字顺浏览 期刊浏览 卷期浏览 Confined‐carrier luminescence of a thin In1−xGaxP1−zAszwell (x∼0...
Confined‐carrier luminescence of a thin In1−xGaxP1−zAszwell (x∼0.13,z∼0.29, ∼400 A˚) in an InPp‐njunction

 

作者: E. A. Rezek,   H. Shichijo,   B. A. Vojak,   N. Holonyak,  

 

期刊: Applied Physics Letters  （AIP Available online 1977）
卷期: Volume 31, issue 8  

页码: 534-536

 

ISSN:0003-6951

 

年代: 1977

 

DOI:10.1063/1.89767

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A thin (∼400 A˚) LPE In1−xGaxP1−zAsz’’trap’’ on thep‐type side of an InP junction [Eg(InP)−Eg(InGaPAs) ≡&Dgr;E∼245 meV], is filled by injection to a high enough density to make it possible to observe confined‐particle states and laser modes in a 70‐meV (≳600 A˚) range. The position of the modes is in good agreement with the transition energies expected for a finite potential well.

 

点击下载:  PDF (246KB)



返 回