Strain relaxation of boron nitride thin films on silicon
作者:
W. Donner,
H. Dosch,
S. Ulrich,
H. Ehrhardt,
D. Abernathy,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 6
页码: 777-779
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121998
出版商: AIP
数据来源: AIP
摘要:
Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of1000 °Cleads to large strain relaxation of about 70&percent;, while the grain size stays constant at 80 Å. ©1998 American Institute of Physics.
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