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Strain relaxation of boron nitride thin films on silicon

 

作者: W. Donner,   H. Dosch,   S. Ulrich,   H. Ehrhardt,   D. Abernathy,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 6  

页码: 777-779

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121998

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of1000 °Cleads to large strain relaxation of about 70&percent;, while the grain size stays constant at 80 Å. ©1998 American Institute of Physics.

 

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