Stable and shallow PdIn ohmic contacts ton‐GaAs
作者:
L. C. Wang,
X. Z. Wang,
S. S. Lau,
T. Sands,
W. K. Chan,
T. F. Kuech,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 21
页码: 2129-2131
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102993
出版商: AIP
数据来源: AIP
摘要:
A thermally stable, low‐resistance PdIn ohmic contact ton‐GaAs has been developed based on the solid phase regrowth mechanism [T. Sands, E. D. Marshall, and L. C. Wang, J. Mater. Res.3, 914 (1988)]. Rapid thermal annealing of a Pd‐In/Pd metallization induces a two‐stage reaction resulting in the formation of a uniform single‐phase film of PdIn, an intermetallic with a melting point greater than 1200 °C. A thin (∼5 nm) layer of average composition In0.4Ga0.6As uniformly covers the interface between the PdIn layer and the GaAs substrate. Specific contact resistivities and contact resistances of ∼1×10−6&OHgr; cm2and 0.14 &OHgr; mm, respectively, were obtained for samples annealed at temperatures in the 600–650 °C range. The addition of a thin layer of Ge (2 nm) to the first Pd layer extends the optimum annealing temperature window down to 500 °C. Specific contact resistivities remained in the low 10−6&OHgr; cm2range after subsequent annealing at 400 °C for over two days.
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