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Mechanical‐stress‐induced degradation in homojunction GaAs LED’s

 

作者: G. Zaeschmar,   R. S. Speer,  

 

期刊: Journal of Applied Physics  (AIP Available online 1979)
卷期: Volume 50, issue 9  

页码: 5686-5690

 

ISSN:0021-8979

 

年代: 1979

 

DOI:10.1063/1.326746

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The thermal stress in an LED caused by junction heating has been calculated. It is shown theoretically that the change of light output with time is proportional to the third power of thermal stress in the junction. This result is experimentally verified. Mechanical‐stress experiments demonstrate that degradation may occur by means of mechanical stress alone. Using the two‐path model for the quantum efficiency and the time dependence of the stress‐induced lattice‐defect concentration, a degradation formula is derived which can be verified to fit the behavior of many LED’s. The characteristic tapering off seen in most degradation curves can be attributed to strain hardening (dislocation pinning). A dark‐line‐defect progression is observed.

 

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