Junctions between amorphous and crystalline semiconductors are investigated theoretically. A new type of junction is formed if the dominant conduction mechanism in the amorphous semiconductor is hopping near the Fermi level. In this case the junctions are expected to exhibit qualitatively different behavior than conventional semiconductor‐ semiconductor or semiconductor‐metal junctions. Current and capacitance as a function of applied voltage are calculated for a simple model. We point out how these measurements can give information about the position of the Fermi‐level and the density of states in the amorphous material.