Antiphase‐domain‐free growth of cubic SiC on Si(100)
作者:
K. Shibahara,
S. Nishino,
H. Matsunami,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 26
页码: 1888-1890
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97676
出版商: AIP
数据来源: AIP
摘要:
Single crystals of cubic SiC that are free of antiphase domains were successfully grown by chemical vapor deposition on Si substrates inclined at 2° from (100) towards (011). The relationship between the generation of antiphase domains and the inclination of a surface was investigated by using spherically polished Si substrates. Inclination, except towards (011), resulted in the generation of antiphase domains. Elimination of antiphase domains was confirmed by molten KOH etching of the grown layer.
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