Change of surface composition of SiO2layers during sputtering
作者:
A. Turos,
W. F. van der Weg,
D. Sigurd,
J. W. Mayer,
期刊:
Journal of Applied Physics
(AIP Available online 1974)
卷期:
Volume 45,
issue 6
页码: 2777-2779
ISSN:0021-8979
年代: 1974
DOI:10.1063/1.1663667
出版商: AIP
数据来源: AIP
摘要:
The composition of thin SiO2films was measuredin situby MeV He+backscattering spectrometry after sequential sputtering with 2‐keV Ar ions. Results indicate that the relative concentration of the constituents in the film changes during sputtering. However, differential analysis showed that after an initial period the ratio of the removed constituents agrees with the original composition. We interpret the change in composition with an existing model according to which only the composition of a thin surface layer changes due to the dissimilar sputtering ratios of the two constituents, while the composition in the remainder of the specimen is unchanged.
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