A study of the anneal technique to recover the electrical characteristics of the packaged metal–oxide semiconductor field effect transistors damaged by Co‐60 irradiation
作者:
Kuei‐Shu Chang‐Liao,
Jenn‐Gwo Hwu,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 2
页码: 744-747
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586441
出版商: American Vacuum Society
关键词: ANNEALING;GAMMA RADIATION;NITROGEN;PHYSICAL RADIATION EFFECTS;MOSFET;ELECTRICAL PROPERTIES
数据来源: AIP
摘要:
Radiation‐induced degradation in packaged metal–oxide semiconductor field effect transistors (MOSFETs) can be efficiently removed by an anneal treatment carried out at 350 °C for 10 min in N2. The electrical characteristics of the MOSFETs including threshold voltageVth, transconductanceGm, and drain currentIdwere examined in the recovery of device performance. The irradiation was performed by a Co‐60 (γ‐ray) source with the irradiation total doses ranging from 10 K rads to 10 M rads. Experimental results show that the anneal treatment can be repeatedly performed on a sample after receiving multiple irradiation and the recovery behavior is quite good for each anneal treatment. The determination of the temperature and the anneal time are also discussed.
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