Sealed‐ampoule diffusion of zinc into Ga1−xAlxAs at 650 °C
作者:
V. Quintana,
J. J. Clemencon,
A. K. Chin,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 7
页码: 2454-2455
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341020
出版商: AIP
数据来源: AIP
摘要:
The diffusivity of the zinc Ga1−xAlxAs at 650 °C was studied using sealed‐ampoule diffusion. Whereas Ageno, Roedel, Mellen, and Escher [Appl. Phys. Lett.47, 1193 (1985)] found dramatic decreases in the zinc diffusivity atxAl≊0.05 andxAl≊0.20 using open‐tube diffusion, the results of the present study show that the sealed‐ampoule technique results in a more uniform dependence of the zinc diffusivity on aluminum concentration.
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