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Sealed‐ampoule diffusion of zinc into Ga1−xAlxAs at 650 °C

 

作者: V. Quintana,   J. J. Clemencon,   A. K. Chin,  

 

期刊: Journal of Applied Physics  (AIP Available online 1988)
卷期: Volume 63, issue 7  

页码: 2454-2455

 

ISSN:0021-8979

 

年代: 1988

 

DOI:10.1063/1.341020

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The diffusivity of the zinc Ga1−xAlxAs at 650 °C was studied using sealed‐ampoule diffusion. Whereas Ageno, Roedel, Mellen, and Escher [Appl. Phys. Lett.47, 1193 (1985)] found dramatic decreases in the zinc diffusivity atxAl≊0.05 andxAl≊0.20 using open‐tube diffusion, the results of the present study show that the sealed‐ampoule technique results in a more uniform dependence of the zinc diffusivity on aluminum concentration.

 

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