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Low temperature epitaxy of HgTe, CdTe, and HgCdTe using flow modulation techniques

 

作者: I. B. Bhat,   H. Ehsani,   W. S. Wang,   S. K. Ghandhi,   N. H. Karam,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 4  

页码: 1376-1379

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585871

 

出版商: American Vacuum Society

 

关键词: BINARY COMPOUNDS;MERCURY TELLURIDES;CADMIUM TELLURIDES;VAPOR PHASE EPITAXY;TERNARY COMPOUNDS;MONOCRYSTALS;MODULATION;TEMPERATURE EFFECTS;(Cd,Te);(Hg,Cd,Te)

 

数据来源: AIP

 

摘要:

In this article, we report on the low temperature growth of HgTe, CdTe, and HgCdTe by flow modulation epitaxy (FME). Dimethylmercury, dimethylcadmium, and methylallyltelluride were used as the precursors in this ‘‘layer‐by‐layer’’ growth approach. Growth of CdTe at one monolayer per cycle was obtained at temperatures above 250 °C. The growth rate was invariant with temperature and reactant pressures. HgTe growth was carried out by FME at 140 °C at atmospheric pressure by precracking the Hg and Te alkyls at 350 °C. HgCdTe layers were grown by interdiffusing sequential layers of CdTe and HgTe.

 

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