A method has been found for introducing ions into SiO2that are highly mobile at room temperature. This is done by contaminating the surface of the oxide with a salt containing the ion to be introduced, followed by charging with a corona discharge. Positive ions move rapidly through a thin layer of oxide and accumulate at the silicon interface where their presence is detected by means ofC‐Vmeasurements. Charge introduced in this way can be subsequently removed by charging with a negative corona, followed by washing in water and annealing.