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The dependence of Al Schottky barrier height on surface conditions of GaAs and AlAs grown by molecular beam epitaxy

 

作者: W. I. Wang,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 3  

页码: 574-580

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582601

 

出版商: American Vacuum Society

 

关键词: aluminium;barrier height;schottky barrier diodes;molecular beam epitaxy;surface cleaning;epitaxial layers;synthesis;molecular beam epitaxy;gallium arsenides;aluminium arsenides;phase studies;cv characteristic

 

数据来源: AIP

 

摘要:

A systematic study of the Al Schottky barrier height on clean GaAs(100) and AlAs(100) as a function of initial arsenic surface coverage has been performed. Two new surface phases on AlAs(100) have been observed. Al Schottky barrier height showed a steady decrease with increasing arsenic coverage on GaAs, and showed steady increase with increasing arsenic coverage on AlAs. The results are compared with current models of Schottky barrier formation.

 

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