Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers
作者:
K. Meehan,
P. Gavrilovic,
J. E. Epler,
K. C. Hsieh,
N. Holonyak,
R. D. Burnham,
R. L. Thornton,
W. Streifer,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 12
页码: 5345-5348
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.334853
出版商: AIP
数据来源: AIP
摘要:
A simple form of a buried heterostructure AlxGa1−xAs‐GaAs quantum‐well laser is described that is realized by impurity‐induced layer disordering (donor‐induceddisordering). The layer disordering [and the resulting band‐gap shift to higher energy (and lower index)] is accomplished by Si diffusion in a stripe pattern defined by a Si3N4mask. Single‐mode lasers of stripe width 3 and 6 &mgr;m are demonstrated that operate continuously at 300 K in the threshold current range of 10–25 mA and with single‐facet power levels as high as 10–20 mW.
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