In-plane strain and strain relaxation in laterally patterned periodic arrays of Si/SiGe quantum wires and dot arrays
作者:
N. Darowski,
U. Pietsch,
Y. Zhuang,
S. Zerlauth,
G. Bauer,
D. Lu¨bbert,
T. Baumbach,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 6
页码: 806-808
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122008
出版商: AIP
数据来源: AIP
摘要:
The depth dependent strain relaxation in photolithographically defined and reactive ion etched Si/SiGe quantum wire and dot arrays is determined by high resolution grazing incidence x-ray diffraction. The laterally periodic structures were aligned along two orthogonal [110] and [1¯10] directions on the (001) surface. By recording reciprocal space maps around the (220) and (2¯20) reciprocal lattice points, the shape and in-plane strain could be determined independently of each other. Using triple axis diffractometry and changing the effective penetration depth of the x-ray radiation between 5 and 300 nm the strain relaxation in the wires and dots could be determined depth resolved. ©1998 American Institute of Physics.
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