To evaluate the applicability of synchrotron radiation x‐ray lithography (SRXL) in ultra‐large‐scale integration manufacturing processes, we simulate a part of a dynamic random access memory process using SRXL. Four levels of x‐ray masks (field, gate, bit contact, and bit line), including fiducial patterns for coordinate/overlay measurement, alignment marks, and 0.4‐μm‐rule memory cells were fabricated using ani‐line stepper. The maximum overlay error between the different level masks was 60–100 nm. In SRXL processes alignment errors of the x‐ray stepper were 60–100 nm (3σ), and the overlay errors over a 20‐mm‐exposure field were 130–160 nm (‖mean‖+3σ) in most of alignment levels. Critical dimension control of 27–47 nm was obtained for gate length and contact hole diameter.