A Si/Pd ohmic contact scheme ton-GaP(n∼5×1017cm−3) was investigated using Rutherford backscattering spectrometry, transmission electron microscopy, energy dispersive x-ray spectrometry, and the Cox–Strack measurement. Contact resistivities of∼2×10−4&OHgr;cm2are obtained for annealing temperatures ranging from 350 to 650 °C. This contact is thermally stable at 550 °C. The ohmic contact formation mechanism is rationalized in terms of the solid phase regrowth of ann+layer and the solid phase epitaxy of a Si layer. ©1997 American Institute of Physics.