Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
作者:
I. J. R. Baumvol,
T. D. M. Salgado,
C. Radtke,
C. Krug,
J. de Andrade,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 14
页码: 1970-1972
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122338
出版商: AIP
数据来源: AIP
摘要:
The redistribution of O and N during the final, thermal oxidation in dryO2step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films (ONO) was investigated using isotopic tracing and depth profiling with nanometer resolution. The results show that the final oxidation step induces atomic transport of O and N species in the system, such that the formed ONO structures are not stacked layer structures, but rather a silicon oxynitride ultrathin film, having moderate concentrations of N in the near-surface and near-interface regions, and a high N concentration in the bulk. ©1998 American Institute of Physics.
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