Porous silicon oxynitrides formed by ammonia heat treatment
作者:
S. S. Tsao,
T. R. Guilinger,
M. J. Kelly,
H. J. Stein,
J. C. Barbour,
J. A. Knapp,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 8
页码: 3842-3847
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346077
出版商: AIP
数据来源: AIP
摘要:
Porous silicon and its oxide can be converted into porous silicon oxynitrides by ammonia heat treatment. For example, ammonia treatment at 1000 °C for 1 h following 850 °C, 30‐min steam oxidation of porous silicon can result in up to 40 at. % nitrogen in the porous oxynitrides. These porous silicon oxynitrides are compositionally more uniform than ammonia‐nitrided thermal oxides which exhibit nitrogen buildup at the oxide layer interfaces. However, the order of the oxidation and nitridation treatment matters: nitrided oxidized porous silicon exhibits higher electrical breakdown strength than nitrided porous silicon or oxidized nitrided porous silicon.
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