The influence ofinsituperturbations of the silicon target crystal electronic subsystem during H+ion implantation has been studied in terms of the type, density, and spatial distribution of accumulated deep traps. A perturbation of the electronic subsystem was achieved through application of a reverse bias to diode test structures. A substantial decrease in deep trap concentration is observed when ion implantation is accompanied by a superimposed reverse bias. The effect is especially pronounced for hydrogen related deep traps atEc−0.3. ©1995 American Institute of Physics.