Spectral response of boron‐implanted amorphous silicon Schottky diode
作者:
T. Chikamura,
Y. Aoki,
K. Yano,
T. Komeda,
T. Ishihara,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 6
页码: 2280-2284
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.334376
出版商: AIP
数据来源: AIP
摘要:
The spectral response of Schottky diodes on hydrogenated amorphous silicon implanted with boron has been investigated. The decrease in sensitivity in the short‐wavelength range has been observed in samples implanted with the boron dose of more than 1.6×1013ions/cm2. The experimental spectral responses are in good agreement with theoretical responses derived from the assumption that the photoexcited carriers are mainly transported by drift field.
点击下载:
PDF
(393KB)
返 回