首页   按字顺浏览 期刊浏览 卷期浏览 Dislocation Pinning in Copper at 4.2°K and in Stage I
Dislocation Pinning in Copper at 4.2°K and in Stage I

 

作者: A. Sosin,  

 

期刊: Journal of Applied Physics  (AIP Available online 1962)
卷期: Volume 33, issue 11  

页码: 3373-3376

 

ISSN:0021-8979

 

年代: 1962

 

DOI:10.1063/1.1931172

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Pure copper samples were electron bombarded at 4.2°K. The elastic modulus was observed to rise in atypically saturating manner during irradiation. Following irradiation, the modulus was observed to increasefurther in the temperature range from 35° to 50°K. The modulus increase is consistent with the Cottrell-Bilbymodel of stress-induced diffusion to dislocations.

 

点击下载:  PDF (1476KB)



返 回