C-V properties of MIS structures with a ferroelectric polymer insulating layer
作者:
Ian Guy,
Pepen Arafin,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 9,
issue 1-3
页码: 199-205
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012924
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
MIS heterostructures have been fabricated with a 56 nm film of ferroelectric polymer as the insulating layer. High frequency C-V measurements have been made at room temperature, for bias voltages from -5 V to +5 V. A shift of the observed C-V curve from the theoretical curve indicates the presence of fixed positive charges, with density of 0·52 mC m−2, in the polymer layer. Injected and polarisation charges also shift the curves, depending on the direction and sweep rate of the bias voltage. At bias voltages above +1 V dipole movement in the polymer reduces the shielding of inversion layers from depletion region, leading to a widening of the depletion region and a consequent decrease in capacitance.
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