The rapid annealing of ion implantation damage in silicon using the radiation from a graphite heater has been demonstrated. Complete 3‐in.‐diam wafers were annealed in a single 10‐sec exposure with high activation for implants of boron (50 keV; 1×1015cm−2) and moderate activation for high‐dose arsenic implants (140 keV; 6×1015cm−2). Dopant redistribution was ∼1000 A˚ for boron and ∼200 A˚ for arsenic. Leakage currents of implantedp+nandn+pdiodes were comparable to those of furnace‐annealed control wafers and indicate good crystallinity in the depletion region near the junction. Diode leakage uniformity across the wafers was also excellent.C‐Vmeasurements on oxides annealed by this technique showed flatband voltages within 0.5 V of those measured on control wafers. This method of annealing implant damage is a practical alternative to those involving more elaborate power sources such as lasers, electron beams, or high‐intensity arc lamps.