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Two-dimensionalpn-junction delineation and individual dopant identification using scanning tunneling microscopy/spectroscopy

 

作者: Kuo-Jen Chao,   Arthur R. Smith,   Andrew J. McDonald,   Dim-Lee Kwong,   Ben G. Streetman,   Chih-Kang Shih,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1998）
卷期: Volume 16, issue 1  

页码: 453-456

 

ISSN:1071-1023

 

年代: 1998

 

DOI:10.1116/1.589829

 

出版商: American Vacuum Society

 

关键词: Si;GaAs:Zn

 

数据来源: AIP

 

摘要:

We have used scanning tunneling microscopy and spectroscopy (STM/S) to study multiplepnjunctions on cross-sectional surfaces of both Si and GaAs devices. The spectroscopy results indicate thatpnjunctions can be resolved at the nanometer scale by using the two-dimensional STS technique. STM is also used to identify Zn dopants on GaAs(110) surfaces. A detail dopant location identification method is presented.

 

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