Correlation between the O+2induced electron emission coefficient and the removal rate of Cu impurities segregated at the SiO2/Si interface
作者:
K. Wittmaack,
Y. Homma,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 19
页码: 2138-2140
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104985
出版商: AIP
数据来源: AIP
摘要:
Sputter removal of thin overlayers of Cu on Si was studied using 10 keV O+2primary ions at near‐normal incidence. The decay length &lgr;, which characterizes the exponential fall‐off of the Cu signal, was found to depend upon the carrier type, the dopant concentration, the polarity and strength of the electric field above the (ntype) samples, and the intensity of light directed at the (ptype) samples, the &lgr; values varying between 0.4 and 2.2 &mgr;m. A similar dependence on sample and bombardment parameters was observed for the ion‐induced electron emission coefficient &ggr; which ranged from 0.05 to 3 electrons/O+2ion. The results suggest that the internal electrical field strength established in the ion‐bombarded sample is largely determined by the effective rate of electron emission. The field strength across the oxide controls the transport of positively charged Cu impurities through this region and thus also determines the Cu removal rate.
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