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Ultrahigh molecular weight poly(methyl methacrylate) as an electron‐beam resist

 

作者: L. M. Gavens,   B. J. Wu,   D. W. Hess,   A. T. Bell,   D. S. Soong,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1983）
卷期: Volume 1, issue 2  

页码: 481-486

 

ISSN:0734-211X

 

年代: 1983

 

DOI:10.1116/1.582630

 

出版商: American Vacuum Society

 

关键词: polymerization;pmma;lithography;photoresists;sensitivity;electron beams;solubility;molecular weight

 

数据来源: AIP

 

摘要:

Ultrahigh molecular weight (UHMW) poly(methyl methacrylate) (PMMA) produced by plasma‐initiated polymerization was investigated for its suitability as an electron‐beam resist. Patterns exposed in this material at low to moderate doses (<5×10−6C/cm2) displayed distorted features after development in a 1:1 mixture of methyl ethyl ketone and isopropanol. The distorted features are believed to originate from a combination of pattern swelling and stress relief.

 

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