The radial variation in electrical and optical characteristics of Si‐implanted InP:Fe wafer activated by rapid thermal annealing has been studied. The sheet carrier concentration (Ns) followed similar radial variation as etch pit density (EPD) whereas the photoluminescence (PL) intensity of C‐Zn acceptor peak varied inversely with EPD. A maximum electron mobility of 2500 cm2/V s and electrical activation of 35% have been obtained for 3×1012cm−2, 200 keV Si+implants annealed for 15 s in the range 700–850 °C. A high intensity peak centered at 1.350 eV was also observed in the PL spectra of the samples and tentatively assigned to a Si‐defect complex.