Influence of charge exchange on ion/neutral arrival rates in an ion‐assisted deposition system
作者:
J‐K. Kim,
H. Kheyrandish,
J. S. Colligon,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1994)
卷期:
Volume 12,
issue 5
页码: 2733-2738
ISSN:0734-2101
年代: 1994
DOI:10.1116/1.579097
出版商: American Vacuum Society
关键词: TITANIUM NITRIDES;CHARGE EXCHANGE;ION−MOLECULE COLLISIONS;ION−ATOM COLLISIONS;NITROGEN IONS;NITROGEN IONS;ARGON IONS;ARGON;THIN FILMS;CROSS SECTIONS;EV RANGE 100−1000;ENERGY BEAM DEPOSITION;HIGH VACUUM;TiN
数据来源: AIP
摘要:
During ion‐assisted deposition of TiN using Kaufman sources the pressure in the substrate chamber can rise to about 10−2Pa. This leads to charge‐exchange collisions and as a result, a component of fast neutral atoms in the energetic beam. This paper considers the transport of 100–500 eV Ar+or N+2ions through a gas mixture of argon and nitrogen of known composition. Charge exchange cross sections for N+2→N2, Ar+→Ar, Ar+→N2, and N+2→Ar reactions have been used to calculate the neutral component of the beam. The results show that the neutral component is only weakly dependent on the primary ion energies and ion species. The magnitude of this component for a constant total pressure of 3×10−2Pa varies between 10% and 60% as the partial pressures of nitrogen (and argon) vary between 1 and 3×10−2Pa.
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