The influence of uniaxial stress on the extrinsic photoconductivity of gallium‐doped germanium has been investigated. It has been found that the long‐wavelength cutoff is shifted from 114 &mgr;m for zero stress to 200 &mgr;m for a uniaxial stress of 6.6×103kg/cm2along a [100] direction. At this value of stress the responsivity was ∼2×104V/W and the NEP was ∼2×10−11W/Hz1/2at 190 &mgr;m.