Characterization of metallic impurities in Si using a recombination-lifetime correlation method
作者:
Manabu Itsumi,
Yoshiyuki Sato,
Kazuo Imai,
Norikuni Yabumoto,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 7
页码: 3250-3255
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365632
出版商: AIP
数据来源: AIP
摘要:
Correlation betweenp-type andn-type Si recombination lifetimes enables us to roughly but rapidly predict the isolation of iron, copper, and stainless-steel components. We examine this correlation method in detail and show that the ratio ofp-type Si andn-type Si lifetimes is not 1:1 but 0.67:1 for iron and 1:0.67 for copper. Some kind of precipitates may be responsible for these ratios. The advantages of the correlation method are quantitatively demonstrated for wafer cleaning, furnace processes, and plasma etching processes. ©1997 American Institute of Physics.
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