Characteristics of lithium niobate based capacitors and transistors
作者:
EricB. Smith,
He Lin,
TimothyA. Rost,
ThomasA. Rabson,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1993)
卷期:
Volume 3,
issue 2
页码: 181-190
ISSN:1058-4587
年代: 1993
DOI:10.1080/10584589308216711
出版商: Taylor & Francis Group
关键词: lithium niobate film;ferroelectric thin films;ferroelectric transistor;ferroelectric switching
数据来源: Taylor
摘要:
The electrical properties of thin film (<1000 Å) capacitor devices of lithium niobate grown on silicon and platinum and of thicker film metal-ferroelectric-semiconductor field effect transistors (MFSFET) with lithium niobate as the gate material were measured. Dielectric constants of the thin films on silicon were as high as 27, while those for films on platinum were as high as 49. The MFSFET structures showed good FET properties, and demonstrated a channel current modulation consistent with switching of the ferroelectric gate by pulsing.
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