Heterojunction p‐i‐n solar cells were made with a‐SiGe:H i‐layers. The band‐gaps of these i‐layers were 1.55 eV for one set of cells and 1.65 eV for another. Both sets of cells were photodegraded, then thermally annealed at various temperatures between 90°C and 150°C. The cells could be fully annealed. The characteristic annealing curves (fractional recovery of the fill factor vs. time) were the same as those previously found for a‐Si cells. However, the activation energy for annealing was higher, about 1.6 eV, compared with 1.2 eV for a‐Si:H layer cells.