Systematic investigations of trapping centers parameters have been carried out on the complete series of GaSxSe1−xsolid solutions by using space‐charge‐limited‐current and thermally stimulated current measurements. Crystals have been grown from the vapor by means of the iodine‐assisted transport method by varying the sulphur percentagexin steps of 0.1. Electron mobility, resistivity, and electron concentration have been carried out at room temperature by means of the Van der Pauw method, with the current flowing along the layers. Three well‐defined electron traps have been found, the energy depth of which varies continuously from GaSe to GaS.